IPB13N03LB G

IPB13N03LB OptiMOS®2 Power-Transistor Product Summary Features V DS • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target applications 30 R DS(on),max 12.5 ID 30 V mΩ A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) PG-TO263-3 • Superior thermal resistance • 175 °C operating temperature • dv /dt rated • Pb-free lead plating; RoHS compliant Type Package Marking IPB13N03LB P-TO263-3 13N03LB Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C2) 30 T C=100 °C 30 Unit A Pulsed drain current I D,pulse T C=25 °C3) 120 Avalanche energy, single pulse E AS I D=30 A, R GS=25 Ω 64 mJ Reverse diode dv /dt dv /dt I D=30 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C 6 kV/µs Gate source voltage4) V GS Power dissipation P tot Operating and storage temperature T j, T stg T C=25 °C IEC climatic category; DIN IEC 68-1 1) ±20 V 52 W -55 ... 175 °C 55/175/56 J-STD20 and JESD22 Rev. 0.93 page 1 2006-05-10 IPB13N03LB Parameter Values Symbol Conditions Unit min. typ. max. - - 2.9 minimal footprint - - 62 6 cm2 cooling area5) - - 40 30 - - Thermal characteristics Thermal resistance, junction - case R thJC SMD version, device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=20 µA 1.2 1.6 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 14.9 18.6 mΩ V GS=10 V, I D=30 A - 10.4 12.5 - 1.2 - Ω 42 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 2) Current is limited by bondwire; with an R thJC=2.9 K/W the chip is able to carry 48 A. 3) See figure 3 4) T j,max=150 °C and duty cycle D